{"title":"采用电荷平均开关电容求和技术的10-fJ/bit/dB半速率均衡器","authors":"Yen-Long Lee, Soon-Jyh Chang","doi":"10.1109/ISNE.2016.7543355","DOIUrl":null,"url":null,"abstract":"This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 10-fJ/bit/dB half-rate equalizer with charge-average switched-capacitor summation technique\",\"authors\":\"Yen-Long Lee, Soon-Jyh Chang\",\"doi\":\"10.1109/ISNE.2016.7543355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543355\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文提出了一种6gb /s低功耗半速率均衡器。与现有的转向求和电路相比,所提出的电荷平均开关电容均衡器具有良好的能量效率和面积效率,适合多车道应用。该结构主要由开关电容和数字电路构成,因此适合于先进的制造工艺。概念验证原型采用台积电0.18 um CMOS技术制造。它占地0.0034 mm2,在误码率<;10-12为6gb /s的数据通过100厘米的FR4 PCB通道,在3ghz下通道损耗为23.2 dB。
A 10-fJ/bit/dB half-rate equalizer with charge-average switched-capacitor summation technique
This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.