{"title":"一种具有动态电流偏置的高效SiGe BiCMOS WCDMA功率放大器，可提高平均效率","authors":"J. Deng, P. Gudem, L. Larson, P. Asbeck","doi":"10.1109/RFIC.2004.1320622","DOIUrl":null,"url":null,"abstract":"This paper demonstrates a WCDMA single-stage power amplifier, fabricated in a 0.25 /spl mu/m SiGe BiCMOS process. With dynamic biasing of the collector current, the average power efficiency is improved by more than a factor of two compared to a typical class AB power amplifier. The power amplifier satisfies the 3GPP class-III WCDMA adjacent channel power ratio (ACPR) specifications (ACPR_5M= -33 dBc and ACPR_10M = -58.8 dBc) with 23.9 dBm average channel output power. The measured output power at the 1 dB compression point is 25.9 dBm.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A high-efficiency SiGe BiCMOS WCDMA power amplifier with dynamic current biasing for improved average efficiency\",\"authors\":\"J. Deng, P. Gudem, L. Larson, P. Asbeck\",\"doi\":\"10.1109/RFIC.2004.1320622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates a WCDMA single-stage power amplifier, fabricated in a 0.25 /spl mu/m SiGe BiCMOS process. With dynamic biasing of the collector current, the average power efficiency is improved by more than a factor of two compared to a typical class AB power amplifier. The power amplifier satisfies the 3GPP class-III WCDMA adjacent channel power ratio (ACPR) specifications (ACPR_5M= -33 dBc and ACPR_10M = -58.8 dBc) with 23.9 dBm average channel output power. The measured output power at the 1 dB compression point is 25.9 dBm.\",\"PeriodicalId\":140604,\"journal\":{\"name\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2004.1320622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2004.1320622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-efficiency SiGe BiCMOS WCDMA power amplifier with dynamic current biasing for improved average efficiency
This paper demonstrates a WCDMA single-stage power amplifier, fabricated in a 0.25 /spl mu/m SiGe BiCMOS process. With dynamic biasing of the collector current, the average power efficiency is improved by more than a factor of two compared to a typical class AB power amplifier. The power amplifier satisfies the 3GPP class-III WCDMA adjacent channel power ratio (ACPR) specifications (ACPR_5M= -33 dBc and ACPR_10M = -58.8 dBc) with 23.9 dBm average channel output power. The measured output power at the 1 dB compression point is 25.9 dBm.
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