基于统计阻塞的纳米cmos电路稀有事件分析算法

Luo Sun, J. Mathew, D. Pradhan, S. Mohanty
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引用次数: 5

摘要

准确、快速地表征纳米cmos电路的工艺变化对于实现高成品率的“面向制造的设计”(DFM)变得越来越重要。了解工艺变化下电路行为的方法之一是分析由于工艺变化而可能发生的罕见事件。统计封锁(SB)是一种分析此类罕见事件的方法。在随机分类中,不同尾部区域的分类阈值选择非常重要,这与罕见事件模拟的数量有关。本文给出了典型电路不同尾部区域的分类阈值。结果表明,给定的分类器根据分类阈值需要不同数量的训练样本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Algorithms for rare event analysis in nano-CMOS circuits using statistical blockade
Accurate and fast characterization of the process variations of nano-CMOS circuits is becoming increasingly important for design for manufacturing (DFM) with highest yield. One of the ways to understand the circuit behavior under the process variations is to analyze the rare events that may happen due to such process variations. The Statistical Blockade (SB) is a approach for such rare events analysis. In SB, the classification threshold selection becomes very important for different tail regions which is related to the number of rare events simulation. This paper presents the values of classification threshold for different tail regions of typical circuits. It is shown that a given classifier requires different number of training samples depending on classification thresholds.
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