热范德保试验结构

O. Paul, L. Plattner, H. Baltes
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引用次数: 34

摘要

报道了一种微机械热范德保试验结构。与传统的范德保希腊交叉测试结构原理相似,它可以确定薄膜的平面内热传导率。利用薄膜样品中的二维热流与薄膜导体中的电流模式之间的类比。从商用CMOS ASIC工艺的完整介电层夹层中提取了1.87/spl times/10/sup 5/ K/W的热片电阻。这相当于CMOS介电层夹层的平均面内导热系数为/spl kappa/=1.44 Wm/sup -1/ K/sup -1/。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A thermal van der Pauw test structure
A micromachined thermal van der Pauw test structure is reported. Similar in principle to the conventional electrical van der Pauw Greek cross test structures, it enables the in-plane thermal sheet conductivities of thin films to be determined. The analogy between the two-dimensional heat flow in thin film samples and the electrical current pattern in thin film conductors is exploited. A thermal sheet resistance of 1.87/spl times/10/sup 5/ K/W was extracted from the complete sandwich of dielectric layers of a commercial CMOS ASIC process. This is equivalent to an average in-plane thermal conductivity of the CMOS dielectric layer sandwich of /spl kappa/=1.44 Wm/sup -1/ K/sup -1/.
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