一种新的基于物理的NPT igbt SPICE模型

Chibante, Armando Araijo, Adriano Carvalh
{"title":"一种新的基于物理的NPT igbt SPICE模型","authors":"Chibante, Armando Araijo, Adriano Carvalh","doi":"10.1109/IECON.2003.1280216","DOIUrl":null,"url":null,"abstract":"A physics based, non-punch-through, insulated gate bipolar transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. Developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) through a variational formulation, with one-dimensional simplex finite elements. Model implementation, in a circuit simulator, is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using standard methods. Thus, this new hybrid model combines advantages of numerical and mathematical methods, through modeling charge carrier behavior with high accuracy even maintaining low execution times.","PeriodicalId":403239,"journal":{"name":"IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A new physics based SPICE model for NPT IGBTs\",\"authors\":\"Chibante, Armando Araijo, Adriano Carvalh\",\"doi\":\"10.1109/IECON.2003.1280216\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A physics based, non-punch-through, insulated gate bipolar transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. Developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) through a variational formulation, with one-dimensional simplex finite elements. Model implementation, in a circuit simulator, is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using standard methods. Thus, this new hybrid model combines advantages of numerical and mathematical methods, through modeling charge carrier behavior with high accuracy even maintaining low execution times.\",\"PeriodicalId\":403239,\"journal\":{\"name\":\"IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IECON.2003.1280216\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IECON.2003.1280216","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

摘要

提出了一种基于物理的非穿孔绝缘栅双极晶体管(NPT-IGBT)模型,并将其移植到现有的电路模拟器SPICE中。所建立的模型基于双极扩散方程(ADE)的变分解,采用一维单纯形有限元法求解,得到了双极扩散方程的时空空穴/电子分布。在电路模拟器中,通过与生成的ode系统进行电气类比来实现模型。设备的其他部分使用标准方法建模。因此,这种新的混合模型结合了数值方法和数学方法的优点,通过在保持低执行时间的情况下高精度地模拟载流子行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new physics based SPICE model for NPT IGBTs
A physics based, non-punch-through, insulated gate bipolar transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. Developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) through a variational formulation, with one-dimensional simplex finite elements. Model implementation, in a circuit simulator, is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using standard methods. Thus, this new hybrid model combines advantages of numerical and mathematical methods, through modeling charge carrier behavior with high accuracy even maintaining low execution times.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信