同轴绕组高频变压器的电场和寄生电容分析

Mohamad Saleh Sanjari Nia, Mohammad R. Altimania, P. Shamsi, M. Ferdowsi
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引用次数: 4

摘要

电场和电压分布分析在优化DC-DC变换器设计中起着重要作用。高频变压器的寄生参数,特别是绕组间和绕组内电容,对隔离式变换器的性能和效率有很大的影响。本文分析了同轴绕组高频变压器的电场、电压分布和绝缘配合。此外,还计算了绕组间和绕组内电容等寄生电容。同轴绕组具有强大的磁耦合和低漏感,这使得它们适用于许多需要低涡流和低铜损耗的应用。因此,对同轴绕组高频变压器的电场和电容特性进行全面的分析,对同轴绕组高频变压器的产业化具有重要的指导意义。本文设计并分析了一种频率为5 kHz、电压等级为400V/400V的2kW高频变压器,用于隔离型DC-DC变换器。本文采用数值方法分析了场的分布并确定了参数。说明了用有限元法求参数的数学过程。本文所采用的设计方法和分析过程可用于设计最佳隔离DC-DC变换器或集成谐振槽电路中的寄生参数,以实现零电压开关(ZVS)和零电流开关(ZCS)。特别是对于转换器,包括碳化硅(SiC)和氮化镓(GaN)开关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electric Field and Parasitic Capacitance Analysis for HF Transformers with Coaxial Winding Arrangements
Electric field and voltage distribution analysis play an important role in designing optimal DC-DC converters. Parasitic parameters, especially interwinding and intra-winding capacitances in high frequency (HF) transformers, hugely influence the performance and efficiency of isolated converters. In this paper, electric field, voltage distribution, and insulation coordination are analyzed for a high frequency transformer with coaxial windings. Also, parasitic capacitances such as interwinding and intra-winding capacitances are calculated. Coaxial windings show a robust magnetic coupling and low leakage inductance, which make them suitable for many applications that need low eddy current and copper loss. Hence, a comprehensive analysis on the electric field and capacitive behavior of the high frequency transformers with coaxial windings is very helpful for industrializing them. In this paper, a 2kW HF transformer with voltage level of 400V/400V at frequency of 5 kHz is designed and analyzed for isolated DC-DC converter applications. For analyzing the field distributions and finding the parameters, numerical method is used. Also, the mathematical procedure of finding parameters with finite element method (FEM) is explained. The design method and the analysis procedure used in this paper can later be used for designing optimal isolated DC-DC converters or integrating parasitic parameters in resonant tank circuits for achieving zero voltage switching (ZVS) and zero current switching (ZCS). Especially for converters including silicon carbide (SiC) and gallium nitride (GaN) switches.
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