制造AlGaAs光电探测器

2015 International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS) Pub Date : 2015-03-13 DOI:10.5220/0005334100870089

O. Rabinovich, S. Didenko, S. Legotin, M. Basalevskiy

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引用次数: 2

摘要

AlGaAs/GaAs光电探测器工作在室温下的可见光谱。该光电探测器的特点是:在μmax = 530-570 nm处，绝对光谱灵敏度高达0.112 A / W;在5 V反向偏置下，光电二极管显示出4.7 nA和530 nA的低暗电流。光谱特性的位移与带隙的增加有关。

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Creating AlGaAs photodetectors

AlGaAs/GaAs photodetectors operate at room temperature in the visible spectrum. Distinctive features of the photodetectors are: high absolute spectral sensitivity up to 0.112 A / W at μmax = 530–570 nm; photodiodes showed the low dark current of 4.7 nA and 530 nA, accordantly, at 5 V reverse bias. The shift of the spectral characteristics which is associated with an increase in the band gap was detected.

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来源期刊

2015 International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS)

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