键合线退化导致IGBT集电极-发射极电压升高的机理分析

2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) Pub Date : 2018-11-01 DOI:10.1109/PEAC.2018.8590628

Yingjie Jia, Yaoqiang Duan, F. Xiao, Yifei Luo, Binli Liu, Hongfei Deng

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引用次数: 2

摘要

本文提出了一种电-热耦合有限元法，用于分析IGBT集电极-发射极电压因键线退化而升高的机理。实验结果表明，键线劣化会导致键线接触电阻增大，这通常被认为是导致IGBT集电极-发射极电压升高的主要原因。然而，由于IGBT芯片的正向压降贡献了集极-发射极电压的大部分，因此电热模拟结果发现，芯片温度的升高是键合线降解后集极-发射极电压升高的主要原因。最后，通过Starpower GD50HFL120C1S IGBT模块的加速实验验证了本文提出的机理分析方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mechanism Analysis of Bond Wire Degradation Leading to the Increase of IGBT Collector-Emitter Voltage

This paper proposed an electro-thermal coupling finite element method for the mechanism analysis of the IGBT collector-emitter voltage increase due to the bond wire degradation. Experimental results show that bond wire degradation may lead to the increase of bond wire contact resistance, which is generally seen as the main reason for the increase of IGBT collector-emitter voltage. However, due to the forward voltage drop in the IGBT chip contributes to the most part of the collector-emitter voltage, the electro-thermal simulation results find that the increased chip temperature is the primary reason for the increase of collector-emitter voltage after the degradation of the bond wires. Finally, the mechanism analysis method presented in this paper is verified by accelerated experiments with Starpower GD50HFL120C1S IGBT modules.

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2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC)

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