Caroline I. Lisevski, A. L. F. Cauduro, P. Franzen, H. Boudinov, D. L. Baptista
{"title":"离子束辐照ZnO纳米线的电学和光学特性","authors":"Caroline I. Lisevski, A. L. F. Cauduro, P. Franzen, H. Boudinov, D. L. Baptista","doi":"10.1109/SBMICRO.2015.7298106","DOIUrl":null,"url":null,"abstract":"Zinc oxide nanowires have been attracting much interest due to their potential use in electronics and optoelectonics devices. In this work, we report on the photoluminescence and electrical behavior of ZnO nanowires grown by vapor-liquid-solid method and irradiated with 1.2 MeV He+ ions at several doses. The results strongly indicates the existence of an enhanced dynamic annealing effect during the low fluence irradiations allowing it to heal low migration barrier point-defects such as oxygen interstitials (OI), zinc interstitials (ZnI), zinc antisites (ZnO) and oxygen antisites (OZn). On the other hand, highly stable defects such as oxygen vacancies (VO), which present higher migration barrier energy, seems to be more pronounced giving rise to short-infrared emission at 1.7 eV.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and optical behavior of ZnO nanowires irradiated by ion beam\",\"authors\":\"Caroline I. Lisevski, A. L. F. Cauduro, P. Franzen, H. Boudinov, D. L. Baptista\",\"doi\":\"10.1109/SBMICRO.2015.7298106\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Zinc oxide nanowires have been attracting much interest due to their potential use in electronics and optoelectonics devices. In this work, we report on the photoluminescence and electrical behavior of ZnO nanowires grown by vapor-liquid-solid method and irradiated with 1.2 MeV He+ ions at several doses. The results strongly indicates the existence of an enhanced dynamic annealing effect during the low fluence irradiations allowing it to heal low migration barrier point-defects such as oxygen interstitials (OI), zinc interstitials (ZnI), zinc antisites (ZnO) and oxygen antisites (OZn). On the other hand, highly stable defects such as oxygen vacancies (VO), which present higher migration barrier energy, seems to be more pronounced giving rise to short-infrared emission at 1.7 eV.\",\"PeriodicalId\":342493,\"journal\":{\"name\":\"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2015.7298106\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2015.7298106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and optical behavior of ZnO nanowires irradiated by ion beam
Zinc oxide nanowires have been attracting much interest due to their potential use in electronics and optoelectonics devices. In this work, we report on the photoluminescence and electrical behavior of ZnO nanowires grown by vapor-liquid-solid method and irradiated with 1.2 MeV He+ ions at several doses. The results strongly indicates the existence of an enhanced dynamic annealing effect during the low fluence irradiations allowing it to heal low migration barrier point-defects such as oxygen interstitials (OI), zinc interstitials (ZnI), zinc antisites (ZnO) and oxygen antisites (OZn). On the other hand, highly stable defects such as oxygen vacancies (VO), which present higher migration barrier energy, seems to be more pronounced giving rise to short-infrared emission at 1.7 eV.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
