s波段GaN PolHEMT功率放大器

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI:10.1109/MIKON.2016.7492073

Marcin Góralczyk, D. Gryglewski

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引用次数: 2

摘要

在PolHEMT项目下，专注于真正块状半绝缘GaN衬底技术开发的AlGaN/GaN HEMT，设计并制造了使用这种类型的抛光晶体管的功率放大器。该放大器在2.5 ghz ~ 3.5 ghz频率范围内实现了以下参数:输出功率为1dB, gcpp大于31dBm，最大功率密度为4.15 w /mm，小信号增益> 12.5 db。

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S-band GaN PolHEMT power amplifier

Under PolHEMT project focused on AlGaN/GaN HEMT on truly bulk semi-insulating GaN substrate technology development a power amplifier using this type of polish transistor was designed and fabricated. The amplifier achieves the parameters as follow: output power at 1dB G.C.P. more than 31dBm, max power density of 4,15W/mm, small-signal gain |S21|>12,5dB, over a 2,5GHz to 3,5GHz frequency range.

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来源期刊

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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