硅波导的深层:通向单片集成的途径

IEEE Photonic Society 24th Annual Meeting Pub Date : 2011-12-22 DOI:10.1109/PHO.2011.6110626

A. Knights, D. Logan, P. Jessop, Richard M. De La Rue, P. Velha, M. Sorel

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引用次数: 1

摘要

本综述描述了硅波导光电探测器的发展，通过控制引入深电平来诱导波长在1550nm左右的灵敏度。这种方法是单片和CMOS兼容的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Deep-levels in silicon waveguides: A route to monolithic integration

This summary describes the development of silicon waveguide photodetectors formed via the controlled introduction of deep-levels to induce sensitivity at wavelengths around 1550nm. This approach is monolithic and CMOS compatible.

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IEEE Photonic Society 24th Annual Meeting

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