一系列用于汽车应用的坚固耐用的DMOS器件

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229032

S. Mouhoubi, Y. Wu, F. Bauwens, J. Roig, P. Gassot, M. Tack

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引用次数: 1

摘要

本文提出了不同的方法来优化智能电源技术的器件鲁棒性考虑。采用分栅的概念，使固有MOS保持在稳定的工作状态，从而提高了nVDMOS的Id-Vd曲线的平整度。分闸也用于增加pLDMOS的BVdss。在nLDMOS漂移区域的末端有一个额外的缓冲器，由于有一个受控的正差分电阻器分支，它有助于扩展SOA限制。

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A family of robust DMOS devices for automotive applications

This paper presents different methodologies to optimize devices of smart power technologies for robustness consideration. A split gate concept is used to improve the flatness of Id-Vd curves of the nVDMOS by maintaining the Intrinsic MOS in a stable operating regime. The split gate is also used to increase the BVdss of the pLDMOS. An additional buffer at the end of the drift region of the nLDMOS helps extending the SOA limits due to a controlled positive differential resistor branch.

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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