一种磁耦合双核154-GHz f类振荡器，在1 mhz偏置下具有-177.1 FoM和-87 dBc/Hz PN，采用22nm FDSOI进行三次谐波提取

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830187

Sarthak Sharma, Hao Gao, G. Hueber, A. Mazzanti

{"title":"一种磁耦合双核154-GHz f类振荡器，在1 mhz偏置下具有-177.1 FoM和-87 dBc/Hz PN，采用22nm FDSOI进行三次谐波提取","authors":"Sarthak Sharma, Hao Gao, G. Hueber, A. Mazzanti","doi":"10.1109/vlsitechnologyandcir46769.2022.9830187","DOIUrl":null,"url":null,"abstract":"This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction\",\"authors\":\"Sarthak Sharma, Hao Gao, G. Hueber, A. Mazzanti\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文提出了一种142-154 GHz三次谐波提取f类振荡器，在1 mhz偏移时的FoM为-177.1。在这项工作中，采用磁耦合双核拓扑来增强f类操作的三次谐波，这也有效地增强了振荡器的负电导。增强的负电导放宽了科尔皮茨振荡器的启动条件，改善了其相位噪声。该振荡器是在22nm CMOS FDSOI中制造的。在154.5 GHz时，测量到的PN在1mhz偏移时为-87.4 dBc/Hz，在10mhz偏移时为-101.8 dBc/Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.

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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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