交流电源循环测试中使用光纤的电源模块热图

Kaichen Zhang, F. Iannuzzo
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引用次数: 0

摘要

功率半导体的抗功率循环能力是决定器件质量和可靠性性能的重要因素。与传统的直流电源循环测试相比,交流电源循环测试可以加速组件在更现实的工作条件下失效。交流电源循环试验中的磨损过程取决于许多参数,其中最大结温$T_{J}$和温度摆动$\ δ T_{J}$是至关重要的。在直流功率循环测试中,传统的方法是使用温度敏感电参数(TSEP)法间接测量$T_{j}$,这种方法在交流功率循环测试中不太适用,因为它会增加电路的复杂度,并且可能会中断PWM工作。本文的目的是评估使用光纤通过硅胶直接测量IGBT电源模块结温的方法,该方法可以在交流电源循环过程中快速准确地确定$T_{j}$。为此,在不同的实验条件下测量了凝胶填充模块和凝胶去除模块的结温。实验结果主要关注:硅凝胶的存在对T_{J}$测量精度的影响,光纤在不同位置被测时硅凝胶内部的温差,以及IGBT芯片的空间温度分布。未来的工作还将包括比较使用光纤和完善的TSEP方法之间的凝胶填充功率模块的$T_{J}$测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal Mapping of Power Modules Using Optical Fibers during AC Power Cycling Tests
The power cycling withstand capability of power semiconductors is of great interest in determining the component's qualification and reliability performance. Compared to the traditional DC Power cycling test, the AC power cycling test can accelerate the component to fail under more realistic operating conditions. The wear process in the AC power cycling test depends on many parameters, among which the maximum junction temperature $T_{J}$, and temperature swing $\Delta T_{j}$ are crucial to be determined. The traditional way in DC power cycling test is to measure the $T_{j}$ indirectly using the temperature-sensitive electrical parameter (TSEP) method, which is not very applicable during the AC power cycling test as it will increase the circuit complicity and may interrupt the PWM operation. The purpose of this paper is to evaluate a direct junction temperature measurement in an IGBT power module through silicone gel using optical fibers, which enables a fast and accurate $T_{j}$ determination during AC power cycling. For this purpose, junction temperatures have been measured for both gel-filled modules and gel-removed modules under different experimental conditions. The experimental results presented concern about: the presence of silicone gel's impact on the $T_{J}$ measurement accuracy, the temperature difference inside the silicone gel while the optical fiber is being instrumented at different positions, and the spatial temperature distributions of the IGBT chip. Future work will also include the comparison of the $T_{J}$ measurements of a gel-filled power module between using the optical fibers and the well-established TSEP method.
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