用于亚太赫兹应用的130纳米BiCMOS工艺中肖特基势垒高度调整的智能方法

2020 IEEE Radio and Wireless Symposium (RWS) Pub Date : 2020-01-01 DOI:10.1109/RWS45077.2020.9050042

V. Gidel, F. Gianesello, P. Chevalier, G. Avenier, N. Guitard, M. Buczko, C. Luxey, G. Ducournau

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引用次数: 0

摘要

本文提出了一种创新的肖特基二极管结构，并在130纳米BiCMOS技术上实现。测量了最先进的1太赫兹截止频率，并提出了一种修改肖特基势垒高度的创新方法。这种智能方法可以实现零偏置高频电路设计，在先进的BiCMOS技术中具有非常低的肖特基势垒高度值，而无需任何定制植入。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications

In this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured and an innovative way to modify the height of the Schottky barrier is proposed. This smart way could enable zero-bias high-frequency circuit designs with a very low height value of the Schottky barrier in advanced BiCMOS technology without requiring any custom implantation.

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2020 IEEE Radio and Wireless Symposium (RWS)

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