硅中的原子量子位

M. Simmons
{"title":"硅中的原子量子位","authors":"M. Simmons","doi":"10.23919/SNW.2019.8782966","DOIUrl":null,"url":null,"abstract":"Extremely long electron and nuclear spin coherence times have been demonstrated in isotopically pure Si-28 [1, 2] making silicon a promising semiconductor material for spin-based quantum information. The two-level spin state of single electrons bound to shallow phosphorus donors in silicon in particular provide well defined, reproducible qubits [3]. An important challenge in these systems is the realisation of an architecture, where we can position donors within a crystalline environment with approx. 20-50nm separation, individually address each donor, manipulate the electron spins using ESR techniques and read-out their spin states.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Atomic qubits in silicon\",\"authors\":\"M. Simmons\",\"doi\":\"10.23919/SNW.2019.8782966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extremely long electron and nuclear spin coherence times have been demonstrated in isotopically pure Si-28 [1, 2] making silicon a promising semiconductor material for spin-based quantum information. The two-level spin state of single electrons bound to shallow phosphorus donors in silicon in particular provide well defined, reproducible qubits [3]. An important challenge in these systems is the realisation of an architecture, where we can position donors within a crystalline environment with approx. 20-50nm separation, individually address each donor, manipulate the electron spins using ESR techniques and read-out their spin states.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

在同位素纯Si-28中已经证明了极长的电子和核自旋相干时间[1,2],使硅成为基于自旋的量子信息的有前途的半导体材料。在硅中,单电子与浅磷供体结合的两能级自旋态提供了定义良好、可重复的量子比特[3]。在这些系统中,一个重要的挑战是实现一个架构,在这个架构中,我们可以在一个近似的晶体环境中定位供体。20-50nm分离,单独定位每个供体,使用ESR技术操纵电子自旋并读出其自旋态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Atomic qubits in silicon
Extremely long electron and nuclear spin coherence times have been demonstrated in isotopically pure Si-28 [1, 2] making silicon a promising semiconductor material for spin-based quantum information. The two-level spin state of single electrons bound to shallow phosphorus donors in silicon in particular provide well defined, reproducible qubits [3]. An important challenge in these systems is the realisation of an architecture, where we can position donors within a crystalline environment with approx. 20-50nm separation, individually address each donor, manipulate the electron spins using ESR techniques and read-out their spin states.
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