{"title":"基于inp的hemt器件技术及其在集成电路中的应用","authors":"T. Enoki, Takashi Kobayashi, Y. Ishii","doi":"10.1109/GAAS.1994.636997","DOIUrl":null,"url":null,"abstract":"This paper reports device technologies for 0.1-/spl mu/m-gate-InP-based HEMTs developed at our laboratory for ultra-high speed ICs. Key developments include a non-alloyed ohmic contact and a T-shaped gate process for high reproducibility and uniformity. As examples of their application to ICs, a 50 GHz low-noise amplifier with NF of 2.6 dB and a 60-GHz bandwidth distributed baseband amplifier with a flat gain of 9 dB are described. Also discussed is the use of a recess-etch stopper to further improve the reproducibility of the gate recess.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":"{\"title\":\"Device technologies for InP-based HEMTs and their application to ICs\",\"authors\":\"T. Enoki, Takashi Kobayashi, Y. Ishii\",\"doi\":\"10.1109/GAAS.1994.636997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports device technologies for 0.1-/spl mu/m-gate-InP-based HEMTs developed at our laboratory for ultra-high speed ICs. Key developments include a non-alloyed ohmic contact and a T-shaped gate process for high reproducibility and uniformity. As examples of their application to ICs, a 50 GHz low-noise amplifier with NF of 2.6 dB and a 60-GHz bandwidth distributed baseband amplifier with a flat gain of 9 dB are described. Also discussed is the use of a recess-etch stopper to further improve the reproducibility of the gate recess.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"44\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636997\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Device technologies for InP-based HEMTs and their application to ICs
This paper reports device technologies for 0.1-/spl mu/m-gate-InP-based HEMTs developed at our laboratory for ultra-high speed ICs. Key developments include a non-alloyed ohmic contact and a T-shaped gate process for high reproducibility and uniformity. As examples of their application to ICs, a 50 GHz low-noise amplifier with NF of 2.6 dB and a 60-GHz bandwidth distributed baseband amplifier with a flat gain of 9 dB are described. Also discussed is the use of a recess-etch stopper to further improve the reproducibility of the gate recess.
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