K. Fukuda, Y. Morita, T. Mori, W. Mizubayashi, M. Masahara, T. Yasuda, S. Migita, H. Ota
{"title":"并联电场隧道场效应管的建模","authors":"K. Fukuda, Y. Morita, T. Mori, W. Mizubayashi, M. Masahara, T. Yasuda, S. Migita, H. Ota","doi":"10.1109/IWCE.2015.7301959","DOIUrl":null,"url":null,"abstract":"Tunnel FETs with vertical tunnel paths are fabricated and successfully modeled by the nonlocal band to band tunneling model. Although enhancement of ON currents are obtained by longer source gate overlap lengths, the increase of the ON current is less than proportional to the overlap lengths, because of non-uniformity of the band to band tunneling generation rates. The behavior of this type of tunnel FETs is precisely explained by the device simulation model. The key point is the peak generation rates at the source edge.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of parallel electric field tunnel FETs\",\"authors\":\"K. Fukuda, Y. Morita, T. Mori, W. Mizubayashi, M. Masahara, T. Yasuda, S. Migita, H. Ota\",\"doi\":\"10.1109/IWCE.2015.7301959\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tunnel FETs with vertical tunnel paths are fabricated and successfully modeled by the nonlocal band to band tunneling model. Although enhancement of ON currents are obtained by longer source gate overlap lengths, the increase of the ON current is less than proportional to the overlap lengths, because of non-uniformity of the band to band tunneling generation rates. The behavior of this type of tunnel FETs is precisely explained by the device simulation model. The key point is the peak generation rates at the source edge.\",\"PeriodicalId\":165023,\"journal\":{\"name\":\"2015 International Workshop on Computational Electronics (IWCE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Workshop on Computational Electronics (IWCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2015.7301959\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2015.7301959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tunnel FETs with vertical tunnel paths are fabricated and successfully modeled by the nonlocal band to band tunneling model. Although enhancement of ON currents are obtained by longer source gate overlap lengths, the increase of the ON current is less than proportional to the overlap lengths, because of non-uniformity of the band to band tunneling generation rates. The behavior of this type of tunnel FETs is precisely explained by the device simulation model. The key point is the peak generation rates at the source edge.
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