具有共振隧道边界的半导体二极管的负差分电导率

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI:10.1109/MSMW.2010.5546144

E. Prokhorov, O. Botsula

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引用次数: 1

摘要

1. 采用隧道或共振隧道示波器的n+-n-n+二极管由于电子在二极管的横向示波器中隧穿或共振隧穿而具有负的差分电导率(ODP)。具有隧道或共振隧道范围的n+-n-n+二极管可以在共面和“三明治”结构中制造。3.分析了n+-n-n+二极管的I - V特性，考虑了隧道和共振隧道。负差分电导率的范围由隧道和谐振隧道范围的参数、工作二极管区域的材料和结构的几何形状决定。4. 所考虑的二极管在小偏置电压下的I - V特性的大非线性可用于毫米波范围内的倍频。

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Negative differential conductivity of semiconductor diode with resonance-tunnel border

1. The diodes of n+-n-n+ with tunnel or resonance-tunnel scopes possess negative differential conductivity (ODP) because of tunneling or resonance tunneling of electrons through the lateral scopes of diodes is showed. 2 The n+-n-n+ diodes with tunnel or resonance-tunnel scopes can be fabricated in a co-planar and in «sandwich» structures is showed. 3. I – V characteristics of n+-n-n+ diodes are analyzed taking into account tunnel or resonance-tunnel is have been analyzed. The region of negative differential conductivity is determined by parameters of tunnel and resonance-tunnel scopes, material of operating diode region and geometry of structure. 4. Large non-linearity of I – V characteristics of considered diodes at small bias voltage can be used for frequency multiplication in millimeter wave range.

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来源期刊

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES

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