双材料栅极-栅极堆叠-椭圆栅极(DMG-GS-EG) MOSFET -一种改进性能的新器件概念

2018 Second International Conference on Advances in Electronics, Computers and Communications (ICAECC) Pub Date : 2018-02-01 DOI:10.1109/ICAECC.2018.8479447

P. Pandey, Pooja S Puri, H. Kaur

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引用次数: 0

摘要

本文建立了双材料栅极-栅极堆-椭圆栅极(DMG-GS-EG) MOSFET的解析模型，并在柱坐标下求解泊松方程，利用等效半径(Reqv)研究了DMG-GS-EG的电学特性。并与单材料栅极-椭圆栅极(SMG-EG) MOSFET、单材料栅极-栅极堆叠-椭圆栅极(SMG-GS-EG) MOSFET和双材料栅极-椭圆栅极(DMG-EG) MOSFET进行了对比分析，研究了该器件抑制短通道效应的有效性。在广泛的参数和偏置条件下进行了详细的分析，结果表明，所提出的DMG-GS-EG装置显示出最可靠的改进结果。

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Dual Material Gate-Gate Stack-Elliptical Gate All Around (DMG-GS-EG) MOSFET – A Novel Device Concept for Improved Performance

In this paper, an analytical model for Dual Material Gate-Gate Stack-Elliptical Gate All Around (DMG-GS-EG) MOSFET is presented and by solving Poisson’s equation in cylindrical coordinates and using equivalent radius (Reqv), the electrical properties of DMG-GS-EG are studied. A comparative analysis is also done with Single Material Gate-Elliptical Gate All Around (SMG-EG) MOSFET, Single Material Gate-Gate Stack-Elliptical Gate All Around (SMG-GS-EG) MOSFET and Dual Material Gate-Elliptical Gate All Around (DMG-EG) MOSFET to study the effectiveness of the proposed device in suppressing short-channel effects. A detailed analysis has been done over a wide range of parameters and bias conditions and it is shown that the proposed DMG-GS-EG device shows the most improved and reliable results.

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2018 Second International Conference on Advances in Electronics, Computers and Communications (ICAECC)

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