溅射过程中H/sub /O分压和温度对AlSiCu-Ti-TiN-Ti金属化织构和电迁移的影响

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1998-10-13 DOI:10.1109/RELPHY.1998.670666

T. Yoshida, S. Hashimoto, Y. Mitsushima, T. Ohwaki, Y. Taga

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引用次数: 5

摘要

研究了Ti溅射过程中残余气体成分和衬底温度对在SiO/sub //Si衬底上沉积TiN/Ti薄膜织构的影响。通过将H/sub /O分压从lx10 -9提高到3x10 -8 Torr，在350°C下沉积的薄膜的Ti(002)和TiN(111)优选织构得到了显著改善。由于表面之间的外延转移，Ti(002)和TiN(ll)织构都表现出相似的H/sub 2/O分压和衬底温度依赖性。Ti(002)织构的改善是由于Ti原子在SiO/sub - 2/表面的自组装，由于表面OH基团的形成而具有较低的表面自由能。用高织构的TiN/Ti薄膜制备的AlSiCu/Ti/TiN/Ti薄膜具有较强的Al(111)织构和光滑的表面。此外，这种改进薄膜的互连具有更长的EM寿命。

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Effect of H/sub 2/O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu-Ti-TiN-Ti metallization

The effect of residual gas constituents and substrate temperature during Ti sputtering on the texture of TiN/Ti films deposited on SiO/sub 2//Si substrates has been investigated. The Ti(002) and TiN(111) preferred texture of the films deposited at 350°C was improved drastically by increasing the H/sub 2/O partial pressure from lxl0-9 to 3xi0-8 Torr. Both the Ti(002) and TiN(lll) texture showed a similar H/sub 2/O partial pressure and substrate temperature dependence because of the epitaxial transfer between these planes. The improved Ti(002) texture was attributed to the self-assembly of Ti atoms on the SiO/sub 2/ surface, which had a low surface free energy due to the formation of surface OH groups. The AlSiCu/Ti/TiN/Ti film fabricated with the highly-textured TiN/Ti film showed a strong Al(111) texture and had a smooth surface. Moreover, interconnects from this improved film had longer EM lifetimes.

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1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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