半导体声子诱导的量子扩散

R. Rosati, F. Rossi
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引用次数: 2

摘要

从基于最近马尔科夫极限的载流子-声子相互作用的密度-矩阵处理开始,我们提供了半导体纳米结构中声子诱导量子扩散的详细研究。特别是,对于光激半导体中的载流子-载流子弛豫,我们的分析表明,简化的消相模型在描述声子诱导的非局域散射时是失败的,并指出这种限制对于准弹性耗散过程尤其严重。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phonon-induced quantum diffusion in semiconductors
Starting from a density-matrix treatment of carrier-phonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phonon-induced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoex-cited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.
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