A Reliable Distributed Modeling Approach Applied to High-Frequency Transistors

A new distributed small-signal modeling approach is proposed for high-frequency analysis of transistors, where the extraction methods for each parameter are defined based on solely the structure of the device. An unconditionally stable implicit scheme is presented to analyze the time domain behavior of the device and the obtained results are compared with the measured results of a 0.1-µm N-polar GaN MISHEMT over a broad frequency range. Another simulation is conducted for a device with a larger width to show the distributed effects of the proposed technique and the reliability of the method in higher operating frequencies.