{"title":"基于非线性Smoluchowski方程的电子-空穴隧穿和扩散的随机模型","authors":"K. Sabelfeld, A. Levykin, A. Kireeva","doi":"10.1109/CSNT.2015.246","DOIUrl":null,"url":null,"abstract":"Based on a stochastic algorithm for simulation of annihilation of spatially separate electrons and holes in a disordered semiconductor, we present numerical results for the photon flux and luminescence in semiconductors. The model is based on the spatially inhomogeneous, nonlinear Smoluchowski equations with random initial distribution density. In the talk we focus on the segregation effect which we have found under certain reaction conditions.","PeriodicalId":334733,"journal":{"name":"2015 Fifth International Conference on Communication Systems and Network Technologies","volume":"7 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Stochastic Model for Electron-Hole Annihilation by Tunneling and Diffusion Based on a Nonlinear Smoluchowski Equations\",\"authors\":\"K. Sabelfeld, A. Levykin, A. Kireeva\",\"doi\":\"10.1109/CSNT.2015.246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on a stochastic algorithm for simulation of annihilation of spatially separate electrons and holes in a disordered semiconductor, we present numerical results for the photon flux and luminescence in semiconductors. The model is based on the spatially inhomogeneous, nonlinear Smoluchowski equations with random initial distribution density. In the talk we focus on the segregation effect which we have found under certain reaction conditions.\",\"PeriodicalId\":334733,\"journal\":{\"name\":\"2015 Fifth International Conference on Communication Systems and Network Technologies\",\"volume\":\"7 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Fifth International Conference on Communication Systems and Network Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSNT.2015.246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Fifth International Conference on Communication Systems and Network Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSNT.2015.246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Stochastic Model for Electron-Hole Annihilation by Tunneling and Diffusion Based on a Nonlinear Smoluchowski Equations
Based on a stochastic algorithm for simulation of annihilation of spatially separate electrons and holes in a disordered semiconductor, we present numerical results for the photon flux and luminescence in semiconductors. The model is based on the spatially inhomogeneous, nonlinear Smoluchowski equations with random initial distribution density. In the talk we focus on the segregation effect which we have found under certain reaction conditions.