90nm SRAM中近drv待机VDD缩放的金丝雀副本反馈

Jiajing Wang, B. Calhoun
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引用次数: 42

摘要

Canary位元在反馈架构中充当在线监视器,以在待机电压调整期间感知核心SRAM位元与数据保留电压(DRV)的接近程度。该方法通过跟踪PVT变化实现了积极的待机VDD扩展,并在数据安全性和减少泄漏功率之间提供了灵活性。一个90 nm 128 Kb SRAM测试芯片证实了金丝雀细胞跟踪温度和VDD的变化,并为闭环VDD缩放系统中的核心细胞提供了可靠的保护机制。与传统的保护带方法相比,可节省多达30倍的电力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Canary Replica Feedback for Near-DRV Standby VDD Scaling in a 90nm SRAM
Canary bitcells act as online monitors in a feedback architecture to sense the proximity to the data retention voltage (DRV) for core SRAM bitcells during standby voltage scaling. This approach implements aggressive standby VDD scaling by tracking PVT variations and gives the flexibility to tradeoff between the safety of data and decreased leakage power. A 90 nm 128 Kb SRAM test chip confirms that the canary cells track changes in temperature and VDD and that they provide a reliable mechanism for protecting core cells in a closed loop VDD scaling system. Power savings improve by up to 30times compared with the conventional guard-banding approach.
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