IGCT-MMC子模块钳位电路损耗的测量与分析

2021 Annual Meeting of CSEE Study Committee of HVDC and Power Electronics (HVDC 2021) Pub Date : 1900-01-01 DOI:10.1049/icp.2021.2595

X. Sun, R. Bai, F. Zhuo, B. Zhao, Y. Lou, Q. Liu, X. Wang

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引用次数: 1

摘要

集成栅极整流晶闸管(IGCT)具有导通损耗小、正向电流能力强等优点，具有进一步发展的潜力。适用于模块化多电平变换器(MMC)的应用。本文对基于igct的MMC的箝位损耗进行了评估。首先，分析了各种开关行为造成的损耗。通过建立实验电路，测量了不同电流下IGCT通断时的箝位损耗。最后，利用平均等效法分析了MMC在特定参数下的钳位损耗。分析表明，钳位损耗约占模块总损耗的5%。

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Measurement and analysis of clamp circuit loss of IGCT-MMC sub-module

Integrated gate commutator thyristor (IGCT) has the advantages of low on-state loss and strong forward current capability, and has the potential for further development. It is suitable for the application of modular multilevel converter (MMC). In this paper, clamping loss of IGCT-based MMC is evaluated. Firstly, the loss caused by various switching behaviours is analysed. The clamping loss caused by IGCT turning-on and turning-off under different current is measured by setting up an experimental circuit. Finally, the clamp loss in specific parameters of MMC is analysed by means of mean equivalent method. The analysis shows that the clamp loss accounts for about 5% of the total loss of the module.

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2021 Annual Meeting of CSEE Study Committee of HVDC and Power Electronics (HVDC 2021)

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