弹性闪存管理提高混合闪存的性能

Bingzhe Li, Bo Yuan, D. Du
{"title":"弹性闪存管理提高混合闪存的性能","authors":"Bingzhe Li, Bo Yuan, D. Du","doi":"10.1109/ICCD53106.2021.00035","DOIUrl":null,"url":null,"abstract":"NAND-based flash memory has become a prevalent storage media due to its low access latency and high performance. By setting up different incremental step pulse programming (ISPP) values and threshold voltages, the tradeoffs between lifetime and access latency in NAND-based flash memory can be exploited. The existing studies that exploit the tradeoffs by using heuristic algorithms do not consider the dynamically changed access latency due to wearing-out, resulting in low access performance. In this paper, we proposed a new Elastic Flash Management scheme, called EFM, to manage data in hybrid flash memory, which consists of multiple physical regions with different read/write latencies according to their ISPP values and threshold voltages. EFM includes a Long-Term Classifier (LT-Classifier) and a Short-Term Classifier (ST-Classifier) to accurately track dynamically changed workloads by considering current quantitative differences of read/write latencies and workload access patterns. Moreover, a reduced effective wearing management is proposed to prolong the lifetime of flash memory by scheduling write-intensive workloads to the region with a reduced threshold voltage and the lowest write cost. Experimental results indicate that EFM reduces the average read/write latencies by about 54% - 296% and obtain 17.7% lifetime improvement on average compared to the existing studies.","PeriodicalId":154014,"journal":{"name":"2021 IEEE 39th International Conference on Computer Design (ICCD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"EFM: Elastic Flash Management to Enhance Performance of Hybrid Flash Memory\",\"authors\":\"Bingzhe Li, Bo Yuan, D. Du\",\"doi\":\"10.1109/ICCD53106.2021.00035\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NAND-based flash memory has become a prevalent storage media due to its low access latency and high performance. By setting up different incremental step pulse programming (ISPP) values and threshold voltages, the tradeoffs between lifetime and access latency in NAND-based flash memory can be exploited. The existing studies that exploit the tradeoffs by using heuristic algorithms do not consider the dynamically changed access latency due to wearing-out, resulting in low access performance. In this paper, we proposed a new Elastic Flash Management scheme, called EFM, to manage data in hybrid flash memory, which consists of multiple physical regions with different read/write latencies according to their ISPP values and threshold voltages. EFM includes a Long-Term Classifier (LT-Classifier) and a Short-Term Classifier (ST-Classifier) to accurately track dynamically changed workloads by considering current quantitative differences of read/write latencies and workload access patterns. Moreover, a reduced effective wearing management is proposed to prolong the lifetime of flash memory by scheduling write-intensive workloads to the region with a reduced threshold voltage and the lowest write cost. Experimental results indicate that EFM reduces the average read/write latencies by about 54% - 296% and obtain 17.7% lifetime improvement on average compared to the existing studies.\",\"PeriodicalId\":154014,\"journal\":{\"name\":\"2021 IEEE 39th International Conference on Computer Design (ICCD)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 39th International Conference on Computer Design (ICCD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD53106.2021.00035\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 39th International Conference on Computer Design (ICCD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD53106.2021.00035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

基于nand的闪存由于其低访问延迟和高性能而成为一种流行的存储介质。通过设置不同的增量步进脉冲编程(ISPP)值和阈值电压,可以在nand闪存的寿命和访问延迟之间进行权衡。现有的利用启发式算法进行权衡的研究没有考虑由于磨损而产生的动态变化的访问延迟,导致访问性能较低。本文提出了一种新的弹性闪存管理方案,称为EFM,用于管理混合闪存中的数据,混合闪存由多个物理区域组成,这些物理区域根据其ISPP值和阈值电压具有不同的读写延迟。EFM包括一个长期分类器(LT-Classifier)和一个短期分类器(ST-Classifier),通过考虑当前读/写延迟和工作负载访问模式的定量差异,精确跟踪动态变化的工作负载。此外,还提出了一种降低有效磨损的管理方法,通过将写密集型工作负载调度到阈值电压较低、写成本最低的区域来延长闪存的使用寿命。实验结果表明,与现有研究相比,EFM将平均读/写延迟降低了54% ~ 296%,平均寿命提高了17.7%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EFM: Elastic Flash Management to Enhance Performance of Hybrid Flash Memory
NAND-based flash memory has become a prevalent storage media due to its low access latency and high performance. By setting up different incremental step pulse programming (ISPP) values and threshold voltages, the tradeoffs between lifetime and access latency in NAND-based flash memory can be exploited. The existing studies that exploit the tradeoffs by using heuristic algorithms do not consider the dynamically changed access latency due to wearing-out, resulting in low access performance. In this paper, we proposed a new Elastic Flash Management scheme, called EFM, to manage data in hybrid flash memory, which consists of multiple physical regions with different read/write latencies according to their ISPP values and threshold voltages. EFM includes a Long-Term Classifier (LT-Classifier) and a Short-Term Classifier (ST-Classifier) to accurately track dynamically changed workloads by considering current quantitative differences of read/write latencies and workload access patterns. Moreover, a reduced effective wearing management is proposed to prolong the lifetime of flash memory by scheduling write-intensive workloads to the region with a reduced threshold voltage and the lowest write cost. Experimental results indicate that EFM reduces the average read/write latencies by about 54% - 296% and obtain 17.7% lifetime improvement on average compared to the existing studies.
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