工程低暗电流密度锗硅光电二极管

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673841

E. Postelnicu, S. Marzen, Rui‐Tao Wen, D. Ma, Baoming Wang, K. Wada, J. Michel, L. Kimerling

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引用次数: 2

摘要

我们研究了425-800C生长后退火和ALD表面钝化对gan - si p-i-n光电二极管暗电流的影响。在250℃下通过Al2O3沉积的侧壁钝化去除所有外围泄漏成分。这些过程在-1V时产生Jd = 160nA/cm2的平均值。

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Engineering Low Dark Current Density for Ge-on-Si Photodiodes

We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al2O3 deposition at 250C removes all peripheral leakage components. These processes yield a mean value of Jd = 160nA/cm² at -1V.

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2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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