通过(110)硅片的无取向富铝液体区热迁移

O. S. Polukhin, V. V. Kravchina
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引用次数: 1

摘要

本文分析了无取向线状带避免饰面的原因和因素。研究表明,在制造大周长、反向电压为2000 V的半导体芯片时,在不同于(111)取向的硅片上形成隔离壁的必要条件是,通过高温选择性强制润湿(HSV)方法形成线性区集合,并满足高温TM过程中对“热迁移”掩模和区浸入阶段的一系列要求。结果表明,即使在稳定的温度梯度场中,这些因素也提供了线性区系综在晶圆中的稳定迁移(110)。在世界上第一次,作者实际证明了在固定温度梯度条件下,无取向线性带的集合通过硅(110)稳定迁移的可能性,并概述了这一过程所需的条件和因素。假设当满足线性区形成和浸入的条件时,硅片的晶体取向完全无关紧要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers
The paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an orientation different from (111) are to form an ensemble of linear zones by the method of high-temperature selective forced wetting (HSV) and to fulfill a number of requirements to the “thermomigration” photomask and zones immersion stage during TM at high temperatures. It is shown that these factors provide a stable migration of an ensemble of linear zones through wafers (110) even in a stationary temperature gradient field. For the first time in the world, the authors practically demonstrate the possibility of stable migration of an ensemble of non-oriented linear zones through silicon (110) in a stationary temperature gradient conditions, outlining the conditions and factors necessary for this process. It is assumed that when the conditions for the formation of linear zones and their immersion are met, the crystallographic orientation of the silicon wafers does not matter at all.
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