低导通电阻和高可靠性功率mosfet

PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference Pub Date : 1988-04-11 DOI:10.1109/PESC.1988.18195

I. Yoshida, M. Morikawa, S. Ohtaka, T. Okabe

{"title":"低导通电阻和高可靠性功率mosfet","authors":"I. Yoshida, M. Morikawa, S. Ohtaka, T. Okabe","doi":"10.1109/PESC.1988.18195","DOIUrl":null,"url":null,"abstract":"Techniques for the design of scaled-down cell-structure power MOSFETs with low on-resistance and high reliability are described. The cell structure is optimized by a three-dimensional computer analysis. The thin gate oxide is protected using a polysilicon protection diode. A planar device with a breakdown voltage of 50 V and an on-resistance of 150 m Omega -mm/sup 2/ has been realized.<<ETX>>","PeriodicalId":283605,"journal":{"name":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low on-resistance and high-reliability power MOSFETs\",\"authors\":\"I. Yoshida, M. Morikawa, S. Ohtaka, T. Okabe\",\"doi\":\"10.1109/PESC.1988.18195\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Techniques for the design of scaled-down cell-structure power MOSFETs with low on-resistance and high reliability are described. The cell structure is optimized by a three-dimensional computer analysis. The thin gate oxide is protected using a polysilicon protection diode. A planar device with a breakdown voltage of 50 V and an on-resistance of 150 m Omega -mm/sup 2/ has been realized.<<ETX>>\",\"PeriodicalId\":283605,\"journal\":{\"name\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1988.18195\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1988.18195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

介绍了具有低导通电阻和高可靠性的微缩单元结构功率mosfet的设计技术。通过三维计算机分析优化了细胞结构。使用多晶硅保护二极管保护薄栅极氧化物。实现了击穿电压为50 V，导通电阻为150 m ω -mm/sup 2/的平面器件。

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Low on-resistance and high-reliability power MOSFETs

Techniques for the design of scaled-down cell-structure power MOSFETs with low on-resistance and high reliability are described. The cell structure is optimized by a three-dimensional computer analysis. The thin gate oxide is protected using a polysilicon protection diode. A planar device with a breakdown voltage of 50 V and an on-resistance of 150 m Omega -mm/sup 2/ has been realized.<>

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PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference

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