aster:双列ReRAM突触的自适应阈值峰值时序神经形态设计

Ziru Li, Qilin Zheng, Bonan Yan, Ru Huang, Bing Li, Yiran Chen
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引用次数: 2

摘要

复杂的事件驱动神经元动力学是在VLSI电路中实现高效脑启发计算架构的障碍。为了解决这个问题并利用事件驱动的优势,我们提出了一种基于电阻随机存取存储器(ReRAM)的神经形态设计,用于进行SNN的时间到第一尖峰推理。除了基本新颖的轴突和神经元电路外,我们还提出了两种通过硬件软件协同设计的技术:“多级触发阈值调整”以减轻ReRAM器件过程变化的影响,以及“定时阈值调整”以进一步加快计算速度。实验结果表明,与现有的峰值神经形态设计相比,我们的跨层解决方案aster节能34.7%以上,同时在工艺变化下保持90.1%的精度,标准差为20%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ASTERS: adaptable threshold spike-timing neuromorphic design with twin-column ReRAM synapses
Complex event-driven neuron dynamics was an obstacle to implementing efficient brain-inspired computing architectures with VLSI circuits. To solve this problem and harness the event-driven advantage, we propose ASTERS, a resistive random-access memory (ReRAM) based neuromorphic design to conduct the time-to-first-spike SNN inference. In addition to the fundamental novel axon and neuron circuits, we also propose two techniques through hardware-software co-design: "Multi-Level Firing Threshold Adjustment" to mitigate the impact of ReRAM device process variations, and "Timing Threshold Adjustment" to further speed up the computation. Experimental results show that our cross-layer solution ASTERS achieves more than 34.7% energy savings compared to the existing spiking neuromorphic designs, meanwhile maintaining 90.1% accuracy under the process variations with a 20% standard deviation.
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