SiC表面热氧化的研究

3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500) Pub Date : 2001-06-26 DOI:10.1109/WBL.2001.946590

M.T.H. Aung, J. Szmidt, M. Bakowski

{"title":"SiC表面热氧化的研究","authors":"M.T.H. Aung, J. Szmidt, M. Bakowski","doi":"10.1109/WBL.2001.946590","DOIUrl":null,"url":null,"abstract":"The authors report systematic investigation of SiO/sub 2/-SiC interface states for n-type 4H-SiC. MOS capacitors were fabricated on homoepilayers grown on n-type 4H-SiC with wet oxidation followed by wet re-oxidation and postmetallization anneals (PMA).","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"The study of thermal oxidation of SiC surface\",\"authors\":\"M.T.H. Aung, J. Szmidt, M. Bakowski\",\"doi\":\"10.1109/WBL.2001.946590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report systematic investigation of SiO/sub 2/-SiC interface states for n-type 4H-SiC. MOS capacitors were fabricated on homoepilayers grown on n-type 4H-SiC with wet oxidation followed by wet re-oxidation and postmetallization anneals (PMA).\",\"PeriodicalId\":315832,\"journal\":{\"name\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WBL.2001.946590\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

系统地研究了n型4H-SiC的SiO/sub - 2/-SiC界面态。采用湿氧化、湿再氧化和后金属化退火(PMA)法制备了n型4H-SiC薄膜上的MOS电容器。

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The study of thermal oxidation of SiC surface

The authors report systematic investigation of SiO/sub 2/-SiC interface states for n-type 4H-SiC. MOS capacitors were fabricated on homoepilayers grown on n-type 4H-SiC with wet oxidation followed by wet re-oxidation and postmetallization anneals (PMA).

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3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)

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