一种直接测量衬垫缝辐射微波功率的简便新方法

J. Quine, D. Overrocker, K. Fisher, J.P. Streeter, A. Pesta
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引用次数: 2

摘要

只提供摘要形式。衬垫接缝目前的特征是表面转移阻抗,它将衬垫接缝输入侧的外加激励电流密度J与输出侧的开路电压VOC联系起来。但是这种方法没有给出辐射到输出区域的功率的信息。使用这种新方法,VOC可以通过一个简单的手场电压探头直接测量,该探头由一根直径小的半刚性同轴电缆组成,该电缆的中心导体在固体金属屏蔽外突出约八分之一英寸。探头沿衬垫缝移动,一边与中心导体接触,另一边与屏蔽接触。沿缝VOC平方的平均值与探测电缆传输到灵敏功率计的平均功率PC有关。总辐射功率PR,然后使用接缝的辐射电导来确定,如1995年8月EMC研讨会文摘(亚特兰大)第393页上作者的公式(7)所示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New and simple method for the direct measurement of microwave power radiated from gasketed seams
Summary form only given. Gasketed seams are currently characterized by the surface transfer impedance which relates applied excitation current density, J, on the input side of the gasketed seam to the open circuit voltage, VOC, on the output side. But this method gives no information on the power radiated into the output region. With the new method, VOC is measured directly with a simple hand-field voltage probe comprising a small-diameter semi-rigid coaxial cable that has the center conductor protruding about one-eighth of an inch beyond the solid metal shield. The probe is moved along the gasketed seam while contacting one side with the center conductor, and the other side with the shield. The average value of the square of VOC along the seam is related to the average power, PC, transmitted by the probe cable to a sensitive power meter. The total radiated power, PR, is then determined using the radiation conductance of the seam, as given by the authors' Eq. (7) on page 393 of the August 1995 EMC Symposium Digest (Atlanta).
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