首次演示通过亚1v后门偏置控制薄体和埋氧化物(TBB)绝缘子上锗(GOI) mosfet的低功率工作阈值电压

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404354

K. Ikeda, Y. Moriyama, M. Ono, Y. Kamimuta, T. Irisawa, Y. Kamata, A. Sakai, T. Tezuka

{"title":"首次演示通过亚1v后门偏置控制薄体和埋氧化物(TBB)绝缘子上锗(GOI) mosfet的低功率工作阈值电压","authors":"K. Ikeda, Y. Moriyama, M. Ono, Y. Kamimuta, T. Irisawa, Y. Kamata, A. Sakai, T. Tezuka","doi":"10.1109/SOI.2012.6404354","DOIUrl":null,"url":null,"abstract":"For the first time, fabrication of TBB-GOI MOSFETs and substantial Vth shifts within 1V back biasing have been demonstrated. The Vth control by extremely low back-gate biases was achieved by using the EOT-scaled BOX structure of ~12nm. This sub-1V back-gate biasing scheme can reduce the power consumption in LSIs without optional voltage supply or charge pump circuits which have large impact to reducing chip size and process cost.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation\",\"authors\":\"K. Ikeda, Y. Moriyama, M. Ono, Y. Kamimuta, T. Irisawa, Y. Kamata, A. Sakai, T. Tezuka\",\"doi\":\"10.1109/SOI.2012.6404354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, fabrication of TBB-GOI MOSFETs and substantial Vth shifts within 1V back biasing have been demonstrated. The Vth control by extremely low back-gate biases was achieved by using the EOT-scaled BOX structure of ~12nm. This sub-1V back-gate biasing scheme can reduce the power consumption in LSIs without optional voltage supply or charge pump circuits which have large impact to reducing chip size and process cost.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

首次证明了TBB-GOI mosfet的制造和1V背偏内的大量Vth移位。采用~12nm的eot尺度BOX结构实现了极低的后门偏置控制。这种低于1v的后门偏置方案可以降低lsi的功耗，而无需选择电压供应或电荷泵电路，这对减小芯片尺寸和工艺成本有很大的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation

For the first time, fabrication of TBB-GOI MOSFETs and substantial Vth shifts within 1V back biasing have been demonstrated. The Vth control by extremely low back-gate biases was achieved by using the EOT-scaled BOX structure of ~12nm. This sub-1V back-gate biasing scheme can reduce the power consumption in LSIs without optional voltage supply or charge pump circuits which have large impact to reducing chip size and process cost.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International SOI Conference (SOI)

自引率

0.00%

发文量