F. Zhang, B. Yang, B. Wicks, Z. Liu, C. Ta, Y. Mo, K. Wang, G. Felic, P. Nadagouda, T. Walsh, W. Shieh, I. Mareels, R. Evans, E. Skafidas
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A 60-GHz direct-conversion transmitter in 130-nm CMOS
This paper describes the system architecture and design procedure for a 60-GHz transmitter in 130-nm CMOS process. The transmitter achieves a saturation power output of better than 4 dBm and an output-referred 1-dB compression point of 2 dBm. The LO to RF port isolation is better than 27 dB from 57 to 65 GHz. To the best of the authorspsila knowledge, this is the first reported 60-GHz transmitter in 130-nm CMOS that incorporates on-chip filtering.
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