{"title":"带自适应偏置电路的宽带线性毫米波功率放大器","authors":"Dehan Wang, Wen-hua Chen, Long Chen, Zhenghe Feng","doi":"10.1109/IEEE-IWS.2019.8804014","DOIUrl":null,"url":null,"abstract":"A broadband linear millimeter-wave power amplifier (PA) with an adaptive bias circuit implemented in 0.25 um SiGe BiCMOS for 5G millimeter-wave phased arrays is presented in this paper. The PA demonstrates a measured 21.7-dB small signal gain, 17.1-dBm saturated output power and 26.5% peak power added efficiency (PAE) at 27 GHz and the peak PAE maintains over 20% from 25 GHz to 32 GHz. At 27.5 GHz, the proposed PA is tested with an 800 MHz bandwidth 64-QAM signal without digital predistortion, which achieves a PAE of 11.56%, error vector magnitude (EVM) of −29.7 dB, and adjacent channel leakage ratio (ACLR) of −28.01 dBc at an average output power of 8.77 dBm.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"302 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Broadband Linear Millimeter-Wave Power Amplifier With an Adaptive Bias Circuit\",\"authors\":\"Dehan Wang, Wen-hua Chen, Long Chen, Zhenghe Feng\",\"doi\":\"10.1109/IEEE-IWS.2019.8804014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband linear millimeter-wave power amplifier (PA) with an adaptive bias circuit implemented in 0.25 um SiGe BiCMOS for 5G millimeter-wave phased arrays is presented in this paper. The PA demonstrates a measured 21.7-dB small signal gain, 17.1-dBm saturated output power and 26.5% peak power added efficiency (PAE) at 27 GHz and the peak PAE maintains over 20% from 25 GHz to 32 GHz. At 27.5 GHz, the proposed PA is tested with an 800 MHz bandwidth 64-QAM signal without digital predistortion, which achieves a PAE of 11.56%, error vector magnitude (EVM) of −29.7 dB, and adjacent channel leakage ratio (ACLR) of −28.01 dBc at an average output power of 8.77 dBm.\",\"PeriodicalId\":306297,\"journal\":{\"name\":\"2019 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"302 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2019.8804014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2019.8804014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Broadband Linear Millimeter-Wave Power Amplifier With an Adaptive Bias Circuit
A broadband linear millimeter-wave power amplifier (PA) with an adaptive bias circuit implemented in 0.25 um SiGe BiCMOS for 5G millimeter-wave phased arrays is presented in this paper. The PA demonstrates a measured 21.7-dB small signal gain, 17.1-dBm saturated output power and 26.5% peak power added efficiency (PAE) at 27 GHz and the peak PAE maintains over 20% from 25 GHz to 32 GHz. At 27.5 GHz, the proposed PA is tested with an 800 MHz bandwidth 64-QAM signal without digital predistortion, which achieves a PAE of 11.56%, error vector magnitude (EVM) of −29.7 dB, and adjacent channel leakage ratio (ACLR) of −28.01 dBc at an average output power of 8.77 dBm.
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