{"title":"锗场效应晶体管","authors":"D. Alford, F. Garrett, L. Sevin","doi":"10.1109/TBTR2.1962.4503248","DOIUrl":null,"url":null,"abstract":"Part I offers a simple introduction to the field-effect transistor for those who are unfamiliar with the device. Standard device design equations are rewritten to emphasize effects of dimensional changes on d-c parameters. Failure mechanisms are discussed. Part II presents a method for overcoming effects of high leakage currents in FETs. A d-c feedback circuit (similar to one described by middlebrook1 for complementary transistors) is proposed and analyzed, and a practical design procedure and circuit are presented.","PeriodicalId":136909,"journal":{"name":"Ire Transactions on Broadcast and Television Receivers","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Germanium field-effect transistors\",\"authors\":\"D. Alford, F. Garrett, L. Sevin\",\"doi\":\"10.1109/TBTR2.1962.4503248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Part I offers a simple introduction to the field-effect transistor for those who are unfamiliar with the device. Standard device design equations are rewritten to emphasize effects of dimensional changes on d-c parameters. Failure mechanisms are discussed. Part II presents a method for overcoming effects of high leakage currents in FETs. A d-c feedback circuit (similar to one described by middlebrook1 for complementary transistors) is proposed and analyzed, and a practical design procedure and circuit are presented.\",\"PeriodicalId\":136909,\"journal\":{\"name\":\"Ire Transactions on Broadcast and Television Receivers\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1962-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ire Transactions on Broadcast and Television Receivers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TBTR2.1962.4503248\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ire Transactions on Broadcast and Television Receivers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TBTR2.1962.4503248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Part I offers a simple introduction to the field-effect transistor for those who are unfamiliar with the device. Standard device design equations are rewritten to emphasize effects of dimensional changes on d-c parameters. Failure mechanisms are discussed. Part II presents a method for overcoming effects of high leakage currents in FETs. A d-c feedback circuit (similar to one described by middlebrook1 for complementary transistors) is proposed and analyzed, and a practical design procedure and circuit are presented.
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