基于蒙特卡罗模拟的GaN HEMT统计建模

Zhikai Chen, Yuehang Xu, R. Xu
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引用次数: 1

摘要

提出了氮化镓高电子迁移率晶体管(HEMT)参数的统计模型。该统计建模方法包括主成分分析、因子分析和多元回归模型。将该方法应用于GaN HEMT器件等效电路参数提取数据库,通过比较原始和蒙特卡罗模拟均值、标准差、相关矩阵和s参数,验证了该方法可以生成准确的统计模型。特别是,这项工作的主要目标是首次将统计模型用于ku波段功率放大器的设计和分析。结果表明,这些参数与实测参数在统计上是不可区分的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Statistical modeling of GaN HEMT based on Monte Carlo simulations
A statistical model of GaN high electron mobility transistor (HEMT)'s parameters is presented. This statistical modeling approach includes principal component analysis and factor analysis and multiple regression model. When applied to the database of extracted equivalent circuit parameters (ECPs) for GaN HEMT devices, it has been validated that this approach can generate accurate statistical model by comparing original and Monte Carlo simulated means, standard deviations, correlation matrix and S-parameters. In particular, the primary goal of this work is that the statistical model has been used to perform a ku-band power amplifier design and analysis for the first time. From the results, it has proven that the parameters are statistically indistinguishable from a measured ones.
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