为获得最佳大信号增益性能而设计宽带GaAs场效应管放大器的新方法

C. Rauscher, H. A. Willing
{"title":"为获得最佳大信号增益性能而设计宽带GaAs场效应管放大器的新方法","authors":"C. Rauscher, H. A. Willing","doi":"10.1109/EUMA.1979.332715","DOIUrl":null,"url":null,"abstract":"An accurate direct method is described for designing broadband GaAs FET amplifiers for optimum power gain performance. The theoretical background of the approach together with experimental verification is given. A power amplifier example is included for illustration.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"New Approach to Designing Broadband GaAs FET Amplifiers for Optimum Large-Signal Gain Performance\",\"authors\":\"C. Rauscher, H. A. Willing\",\"doi\":\"10.1109/EUMA.1979.332715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An accurate direct method is described for designing broadband GaAs FET amplifiers for optimum power gain performance. The theoretical background of the approach together with experimental verification is given. A power amplifier example is included for illustration.\",\"PeriodicalId\":128931,\"journal\":{\"name\":\"1979 9th European Microwave Conference\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 9th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1979.332715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 9th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1979.332715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

描述了一种精确的直接方法来设计宽带GaAs场效应管放大器,以获得最佳的功率增益性能。给出了该方法的理论背景和实验验证。包括一个功率放大器的例子来说明。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New Approach to Designing Broadband GaAs FET Amplifiers for Optimum Large-Signal Gain Performance
An accurate direct method is described for designing broadband GaAs FET amplifiers for optimum power gain performance. The theoretical background of the approach together with experimental verification is given. A power amplifier example is included for illustration.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信