WBG器件双脉冲试验台的设计过程

Mohammed Amer Karout, O. Alatise, Heaklig Ayala, C. Fisher, P. Mawby, Mohamed Taha
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摘要

本文介绍了一种先进的双脉冲试验试验台的设计和广泛分析。与设计DPT电路时通常进行的简单分析不同,在这项工作中,分析严格考虑了电容、电感、PCB固定装置和被测器件(DUT)中的寄生效应,以获得最高的测量精度。利用SPICE仿真工具对所提出的系统模型进行了仿真,考虑了所有寄生因素,验证了优化设计参数的可行性。然后,根据所提出的方法实现了物理测试平台,以减少直流链路电容器和夹具之间的寄生电感。该平台设计灵活,可以使用具有低寄生的不同夹具连接分立和模块被测器。测量电路经过精心优化,以提供捕获宽带隙(WBG)器件的高dI/dt和dV/dt的能力。该系统还可以通过加热器和温度控制器提供温度控制,因此可以评估开关损耗随结温的变化。结果验证了该设计的可行性,在波形中获得了低振铃和低电压超调,即使使用低栅极电阻,也可以简化开关损耗计算。最后是1。对2kV/ 90a额定碳化硅器件进行了测试,并对其在不同结温下的开关能量进行了评估,以证明该系统的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the Design Procedure of the Double Pulse Test Rig for WBG devices
In this paper, the design and extensive analysis of an advanced test rig for double pulse tests (DPT) is presented. Unlike the simplistic analysis that is usually done whilst designing a DPT circuit, in this work, the analysis critically considers the effects of parasitics in the capacitor, inductor, PCB fixtures, and the device under test (DUT), to attain the highest measurements accuracy. The model for the proposed system is simulated using a SPICE simulation tool, which considers all the parasitics and demonstrates the feasibility of optimizing the design parameters. Then, the physical test rig is implemented following the proposed approach to reduce the parasitic inductance between the DC-link capacitors and the fixture. The rig is designed to be flexible, where different fixtures with low parasitics can be used to connect discrete and module DUTs. The measurement circuitry is carefully optimised, to provide the ability of capturing the high dI/dt and dV/dt of wide bandgap (WBG) devices. The system can also provide temperature control via a heater and a temperature controller, so the variation of switching losses with junction temperature can be assessed. The results validate the feasibility of the design, where low ringing and low voltage overshoot in the waveforms have been obtained, easing the switching losses calculations, even with low gate resistors. Finally, a 1. 2kV/90 A rated silicon carbide device has been tested, and its switching energy has been evaluated at different junction temperatures to demonstrate the capabilities of the system.
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