{"title":"硫化物和硒化物玻璃中纳米结构的起源","authors":"Andriy Kevshyn, V. Halyan, A. Tretyak","doi":"10.32782/pet-2021-2-5","DOIUrl":null,"url":null,"abstract":"Based on radiography data, the X-ray scattering curves of HgX-GeX 2 (X-S, Se) X-ray alloys were compared with the diffraction patterns of polycrystalline Hg 2 GeSe 4 (Hg 4 GeS 6 ) alloys. In the amorphous matrix of the alloy based on compounds Hg 2 GeSe 4 for selenide and Hg 4 GeS 6 for sulfide systems dispersed inhomogeneities. For the selenide system, the size of the inhomogeneities is about 5 nm.","PeriodicalId":355803,"journal":{"name":"Physics and educational technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"ORIGIN OF NANOSTRUCTURES IN SULPHIDE AND SELENIDE GLASSES\",\"authors\":\"Andriy Kevshyn, V. Halyan, A. Tretyak\",\"doi\":\"10.32782/pet-2021-2-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on radiography data, the X-ray scattering curves of HgX-GeX 2 (X-S, Se) X-ray alloys were compared with the diffraction patterns of polycrystalline Hg 2 GeSe 4 (Hg 4 GeS 6 ) alloys. In the amorphous matrix of the alloy based on compounds Hg 2 GeSe 4 for selenide and Hg 4 GeS 6 for sulfide systems dispersed inhomogeneities. For the selenide system, the size of the inhomogeneities is about 5 nm.\",\"PeriodicalId\":355803,\"journal\":{\"name\":\"Physics and educational technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics and educational technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.32782/pet-2021-2-5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics and educational technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.32782/pet-2021-2-5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
ORIGIN OF NANOSTRUCTURES IN SULPHIDE AND SELENIDE GLASSES
Based on radiography data, the X-ray scattering curves of HgX-GeX 2 (X-S, Se) X-ray alloys were compared with the diffraction patterns of polycrystalline Hg 2 GeSe 4 (Hg 4 GeS 6 ) alloys. In the amorphous matrix of the alloy based on compounds Hg 2 GeSe 4 for selenide and Hg 4 GeS 6 for sulfide systems dispersed inhomogeneities. For the selenide system, the size of the inhomogeneities is about 5 nm.
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