射频磁控溅射制备高k2和k352 Sc0.4A10.6N薄膜

2022 IEEE International Ultrasonics Symposium (IUS) Pub Date : 2022-10-10 DOI:10.1109/IUS54386.2022.9957523

Y. Shimizu, T. Yanagitani

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引用次数: 1

摘要

钪氮化铝(ScAlN)薄膜由于其大厚度的外延模机电耦合系数$k_{\ mathm {t}}{}}^{2}$而被商业应用于射频滤波器。此外，c轴倾斜的ScAlN薄膜由于具有高准厚度剪切模式$k_{35^{2}}^{\prime}$，是生物传感器和陀螺传感器的良好候选者。在本研究中，我们制备了c轴取向(0001)Sco.4Alo。6N薄膜和c轴34°倾斜的Sco.4Alo。射频磁控溅射制备6N薄膜。$k_{\ mathm {t}}{}^{2}$的c轴定向(0001)Sco.4Alo。6N膜采用CL法评价为21.4%，其他4种$k_{\ mathm {t}}{}^{2}$估计方法评价为约28%。c轴倾斜Sc0.4Al0.6N膜的$k_{35^{2}}^{\prime}$估计至少为22.9%。这些高美元k_ {\ mathrm {t}}{} ^{2} $和$ k_ {35 ^ {2}} ^ {\ '} Sco.4Alo的美元。6N薄膜具有较高的晶向和高Sc浓度下异常取向晶粒(AOGs)的抑制作用。

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Fabrication of high kt2and k’ 352 Sc0.4A10.6N thin films by RF magnetron sputtering

Scandium aluminum nitride (ScAlN) films are commercially used for RF filter application owing to their large thickness extensional mode electromechanical coupling coefficient $k_{\mathrm{t}}{}^{2}$. In addition, c-axis tilted ScAlN films are good candidates for biosensors and gyro-sensors because of their high quasi thickness shear mode $k_{35^{2}}^{\prime}$. In this study, we fabricated c-axis oriented (0001) Sco.4Alo.6N thin film and c-axis 34° tilted Sco.4Alo.6N thin film by RF magnetron sputtering. $k_{\mathrm{t}}{}^{2}$ of the c-axis oriented (0001) Sco.4Alo.6N film was evaluated to be 21.4% by CL method and approximately 28% by other four kinds of $k_{\mathrm{t}}{}^{2}$ estimation methods. $k_{35^{2}}^{\prime}$ of the c-axis tilted Sc0.4Al0.6N film was evaluated to be at least 22.9%. These high $k_{\mathrm{t}}{}^{2}$ and $k_{35^{2}}^{\prime}$ of the Sco.4Alo.6N thin films can be attributed to the high crystalline orientation and the suppression of abnormally oriented grains (AOGs) at high Sc concentration.

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2022 IEEE International Ultrasonics Symposium (IUS)

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