Analytical modelling of surface potential of modified source FD-SOI MOSFET

In this paper, a 2-D (two dimensional) analytical model for the surface potential variation forward to the channel in modified source fully depleted silicon on insulator (FD-SOI) n-MOSFET has been presented. In order to demonstrate the novel features offered by the modified source FD-SOI MOSFET n-MOSFET, the two dimensional surface potential model has also been investigated on various aspects such as effect of silicon film thickness variation and effects of different levels of source doping. And in continuation, to verify the short channel immunity of the device the surface potential model vs channel length for DIBL at different drain to source voltages has been discussed.