超过w波段的氮化镓放大器

2018 IEEE Radio and Wireless Symposium (RWS) Pub Date : 1900-01-01 DOI:10.1109/RWS.2018.8304971

A. Fung, L. Samoska, P. Kangaslahti, R. Lin, I. Mehdi, G. Sadowy, S. Tanelli, D. Esteban-Fernandez, A. Peralta, M. Soria, A. Brown, D. Gritters, S. O'Connor, S. Lardizabal

{"title":"超过w波段的氮化镓放大器","authors":"A. Fung, L. Samoska, P. Kangaslahti, R. Lin, I. Mehdi, G. Sadowy, S. Tanelli, D. Esteban-Fernandez, A. Peralta, M. Soria, A. Brown, D. Gritters, S. O'Connor, S. Lardizabal","doi":"10.1109/RWS.2018.8304971","DOIUrl":null,"url":null,"abstract":"We have developed gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) amplifiers that span different frequency ranges from Q-band (33–50 GHz) into G-band (140–220 GHz). We have designed, fabricated and tested a broadband amplifier with more than 11 dB of gain from 38 GHz to at least 110 GHz, and a broadband amplifier with gain across all of F-band (90–140 GHz) with peak gain of 18.9 dB and noise figure of 7.4 dB at 120 GHz. In G-band we have developed an amplifier with 8.7 dB small-signal gain at 149 GHz, and when two such amplifiers were placed in series, large signal power measurements gave 18.2 dBm of output RF power and 10 dB gain at 147 GHz. These results demonstrate 0.15 μm gate length GaN HEMTs are applicable for amplifiers through F-band and into G-band.","PeriodicalId":170594,"journal":{"name":"2018 IEEE Radio and Wireless Symposium (RWS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Gallium nitride amplifiers beyond W-band\",\"authors\":\"A. Fung, L. Samoska, P. Kangaslahti, R. Lin, I. Mehdi, G. Sadowy, S. Tanelli, D. Esteban-Fernandez, A. Peralta, M. Soria, A. Brown, D. Gritters, S. O'Connor, S. Lardizabal\",\"doi\":\"10.1109/RWS.2018.8304971\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) amplifiers that span different frequency ranges from Q-band (33–50 GHz) into G-band (140–220 GHz). We have designed, fabricated and tested a broadband amplifier with more than 11 dB of gain from 38 GHz to at least 110 GHz, and a broadband amplifier with gain across all of F-band (90–140 GHz) with peak gain of 18.9 dB and noise figure of 7.4 dB at 120 GHz. In G-band we have developed an amplifier with 8.7 dB small-signal gain at 149 GHz, and when two such amplifiers were placed in series, large signal power measurements gave 18.2 dBm of output RF power and 10 dB gain at 147 GHz. These results demonstrate 0.15 μm gate length GaN HEMTs are applicable for amplifiers through F-band and into G-band.\",\"PeriodicalId\":170594,\"journal\":{\"name\":\"2018 IEEE Radio and Wireless Symposium (RWS)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Radio and Wireless Symposium (RWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2018.8304971\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2018.8304971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

摘要

我们开发了氮化镓(GaN)单片微波集成电路(MMIC)放大器，其跨越不同的频率范围，从q波段(33-50 GHz)到g波段(140-220 GHz)。我们设计、制造并测试了一个增益在38 GHz至至少110 GHz范围内超过11 dB的宽带放大器，以及一个增益在所有f波段(90-140 GHz)的宽带放大器，在120 GHz时峰值增益为18.9 dB，噪声系数为7.4 dB。在g频段，我们开发了一种在149ghz时具有8.7 dB小信号增益的放大器，当两个这样的放大器串联时，大信号功率测量在147ghz时输出射频功率为18.2 dBm，增益为10db。结果表明，0.15 μm栅极长度的GaN hemt适用于从f波段到g波段的放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Gallium nitride amplifiers beyond W-band

We have developed gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) amplifiers that span different frequency ranges from Q-band (33–50 GHz) into G-band (140–220 GHz). We have designed, fabricated and tested a broadband amplifier with more than 11 dB of gain from 38 GHz to at least 110 GHz, and a broadband amplifier with gain across all of F-band (90–140 GHz) with peak gain of 18.9 dB and noise figure of 7.4 dB at 120 GHz. In G-band we have developed an amplifier with 8.7 dB small-signal gain at 149 GHz, and when two such amplifiers were placed in series, large signal power measurements gave 18.2 dBm of output RF power and 10 dB gain at 147 GHz. These results demonstrate 0.15 μm gate length GaN HEMTs are applicable for amplifiers through F-band and into G-band.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE Radio and Wireless Symposium (RWS)

自引率

0.00%

发文量