CH4/N2混合气体中碳纳米管生长的RF PE-CVD特性

Y. Sung, T. Yuji, T. Sakoda
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引用次数: 3

摘要

通过对制备的碳纳米管进行表征和数值模拟,研究了射频(RF)等离子体增强气相沉积(PE-CVD)在ch4 /N2混合气体中生长碳纳米管(CNTs)的特性。碳纳米管的制备采用单腔等离子体工艺,其中使用电容耦合等离子体(CCP)的催化剂溅射沉积和使用电感耦合等离子体的PE-CVD在同一放电室内进行。利用可计算等离子体中粒子密度随时间变化的数值程序对等离子体化学进行了评价,这有助于优化制备条件。结果表明了单室工艺系统的有效性。还发现CH4、HCN和C2H6自由基对CNTs的生长起主要作用
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RF PE-CVD Characteristics for the Growth of Carbon Nanotubes in a CH4/N2 mixed gas
Characteristics of radio-frequency (RF) plasma-enhanced vapor deposition (PE-CVD) for the growth of carbon nanotubes (CNTs) in a CH 4/N2 mixed gas were investigated through characterization of the prepared CNTs and a numerical simulation. The preparation of the CNTs was performed by the single chamber plasma process where the catalyst sputter deposition using a capacitively coupled plasma (CCP) and the PE-CVD using an inductively coupled plasma were carried out in the same discharge chamber. The plasma chemistry which is useful for optimizing preparation conditions was evaluated using the numerical code which could calculate the temporal evolution of particle densities in the plasma. The results showed the usefulness of the single chamber process system. It was also found that CH4, HCN and C2H6 radicals mainly contributed to the growth of CNTs
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