太阳能电池用P3HT材料缺陷状态的测定

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI:10.1109/ASDAM.2014.6998702

P. Juhasz, L. Stuchlíková, M. Micjan, L. Harmatha, J. Jakabovic, M. Weis

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摘要

采用稳态电流电压技术和深能级瞬态光谱(DLTS)方法研究了ITO/P3HT/ in有机二极管结构中的缺陷态。温度依赖关系用于计算电荷输运活化能。从电流电压测量和DLTS技术估计的活化能约为0.15 eV，代表了P3HT的主要缺陷状态。

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Determination of defect states in P3HT material for solar cell application

The defect states are investigated in ITO/P3HT/In organic diode structure by steady-state current-voltage technique and deep-level transient spectroscopy (DLTS) method. The temperature dependencies are used to evaluate charge transport activation energies. The activation energy of about 0.15 eV estimated from the current-voltage measurement as well as from the DLTS technique represents the dominant defect state in P3HT.

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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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