CMOS LNA单片集成的7 ghz反f天线

2006 International Symposium on Intelligent Signal Processing and Communications Pub Date : 2006-12-01 DOI:10.1109/ISPACS.2006.364881

D. Ueo, H. Osabe, K. Inafune, Masayuki Ikebe, Eiichi Sano, Masato Koutanit, Masayuki Ikedat, Koichiro Mashikot

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引用次数: 4

摘要

为了降低无线设备的成本，强烈要求将发射和接收天线与CMOS lsi单片集成。作为在有损耗Si衬底上实现高性能天线的第一步，我们阐明了用于多频段OFDM UWB组3频谱分配对应的7 ghz频段的倒f天线的设计方法和基本特性。采用0.18 μ m混合信号/射频CMOS工艺，设计并制作了一种反f天线和低噪声放大器(LNA)。对实测和计算的天线增益特性进行了比较。实测天线增益在多频带OFDM UWB组3频段约为- 25db。通过考虑芯片的实际几何形状，得到了测量增益与设计增益相当一致的结果

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7-GHz Inverted-F Antenna Monolithically Integrated with CMOS LNA

Transmitter and receiver antennas monolithically integrated with CMOS LSIs are strongly demanded for reducing the cost of wireless equipment. As the first step toward realizing high-performance antennas on lossy Si substrates, we clarify the design methodology and basic characteristics of inverted-F antennas used for the 7-GHz band corresponding to multi-band OFDM UWB group3 spectrum allocation. An inverted-F antenna along with a low-noise amplifier (LNA) are designed and fabricated using a 0.18-mum mixed signal/RF CMOS process with one poly and six metal layers. Comparisons between measured and calculated antenna gain characteristics are made. Measured antenna gain is about -25 dB in the multi-band OFDM UWB group3 frequency band. Fairly good agreement between measured and designed gains is obtained by taking account of the real geometry of the fabricated chip

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2006 International Symposium on Intelligent Signal Processing and Communications

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