用重离子和TCAD模拟研究28nm UTBB-FDSOI器件的SEU

Mei Bo, Ge Yong, Sun Yi, Z. Hongwei, Zhao Xing, Li Bo, Liu Mengxin
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引用次数: 1

摘要

通过重离子辐照试验和TCAD模拟,研究了28nm UTBB-FDSOI SRAM中几种类型的辐射硬化比特单元的单事件扰动。据报道,FDSOI SRAM电池的重离子SEU横截面比平面体技术的等效电池低20年。通过强化设计,8T位单元SRAM能够达到低LET重离子的抗扰性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of SEU of 28nm UTBB-FDSOI Device by Heavy Ions and TCAD Simulation
Single Event Upsets in 28nm UTBB-FDSOI SRAM with several types of radiation hardened Bit-cells are studied by heavy ion irradiation test and TCAD simulation. Heavy-ion SEU cross section of the FDSOI SRAM cell are two decades lower than an equivalent cell in planar bulk technology as reported. Through the hardened design, the 8T bit-cells SRAM is able to reach the upset-immune for low LET heavy ions.
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