带隙调制A-C纳米层电子场发射中负差分电导的观察

W. Tsang, S. Henley, V. Stolojan, S. Silva
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引用次数: 0

摘要

研究了非晶碳基量子阱结构的场发射特性。采用脉冲激光烧蚀高掺杂n型(100)Si晶片上的石墨靶生长了a- c纳米层。这些层的带隙是通过激光通量变化来调制的。在15 V/mum (Fp)时观察到负差分电导峰值,在25 V/mum (Fs)时观察到发射电流突然增加。对这些异常性质作了分析
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Negative Differential Conductance Observed in Electron Field Emission from Band Gap Modulated A-C Nanolayers
The field emission properties of an amorphous carbon (a-C) based quantum well structures are investigated. The a-C nanolayers are grown by pulsed laser ablation of a graphite target on highly doped n-type (100) Si wafers. The band gap of these layers are modulated through laser fluence variation. A negative differential conductance peak at 15 V/mum (Fp) and an abrupt increase in emission current at 25 V/mum (Fs) are observed. An analysis of these anomalous properties is made
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