{"title":"可控侧壁角SiO/ sub2 /中过孔的刻蚀","authors":"R. Carlile, J. L. Houghten","doi":"10.1109/PLASMA.1989.166269","DOIUrl":null,"url":null,"abstract":"A technique in which the sidewall angle of a via is controlled by the components of the chemistry is reported. The wafer is","PeriodicalId":165717,"journal":{"name":"IEEE 1989 International Conference on Plasma Science","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Etching of vias in SiO/sub 2/ with controllable sidewall angles\",\"authors\":\"R. Carlile, J. L. Houghten\",\"doi\":\"10.1109/PLASMA.1989.166269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A technique in which the sidewall angle of a via is controlled by the components of the chemistry is reported. The wafer is\",\"PeriodicalId\":165717,\"journal\":{\"name\":\"IEEE 1989 International Conference on Plasma Science\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1989 International Conference on Plasma Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PLASMA.1989.166269\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1989 International Conference on Plasma Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PLASMA.1989.166269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
